%0 Journal Article
%T 异价Cu取代对Zn掺杂Mg<sub>3</sub>Sb<sub>2</sub>基材料热电性能的影响<br>Effects of Aliovalent Cu Substitution on Thermoelectric Properties in Zn-Doping Mg<sub>3</sub>Sb<sub>2</sub>-Based Materials
%A 董天豪
%A 韦良换
%A 朱胜杰
%A 崔永鹏
%A 邵耀铭
%A 郑萍萍
%A 斯剑霄
%J Material Sciences
%P 317-325
%@ 2160-7621
%D 2025
%I Hans Publishing
%R 10.12677/ms.2025.152037
%X Zn空位对Zn-Sb Zintl相热电材料的热输运和电输运有重要影响。本文采用快速感应熔炼和真空热压法制备了p型Mg<sub>1.77</sub>Cu<sub>x</sub>Zn<sub>1.2</sub><sub>&#8722;</sub><sub>0.5x</sub>Ag<sub>0.03</sub>Sb<sub>2 </sub>(x = 0, 0.02, 0.05, 0.08, 0.1)样品&#65292;研究了Zn空位上的异价铜取代对样品热电性能的影响。实验结果表明&#65292;在低掺杂浓度下(x &lt; 0.05)&#65292;Cu原子优先占据Zn空位&#65292;降低载流子浓度&#65292;在x &#707; 0.05的样品中生成第二相MgCuSb&#65292;抑制了双极效应&#65292;同时调制掺杂提高了功率因子。此外&#65292;异价Cu取代和MgCuSb相的存在导致晶格无序&#65292;增强了声子散射&#65292;降低了晶格热导率。因此&#65292;Mg<sub>1.77</sub>Cu<sub>0.05</sub>Zn<sub>1.175</sub>Ag<sub>0.03</sub>Sb<sub>2</sub>样品在673 K时得到了最大<i>z</i><i>T</i>值为0.60&#65292;相比于未掺杂Cu样品的<i>zT</i>值提升了33%。我们的研究表明&#65292;用异价Cu调控Zn空位是提高p型Mg<sub>3</sub>Sb<sub>2</sub>基材料热电性能的有效策略。<br>Zn vacancies have been proposed to have significant impacts on thermal and electronic transport for Zn-Sb Zintl phase materials. In this work, we investigated the effect of aliovalent Cu substitution at Zn vacancies on thermoelectric performance in p-type Mg<sub>1.77</sub>Cu<sub>x</sub>Zn<sub>1.2</sub><sub>&#8722;</sub><sub>0.5x</sub>Ag<sub>0.03</sub>Sb<sub>2 </sub>(x = 0, 0.02, 0.05, 0.08, 0.1) samples prepared by rapid induction melting and hot pressing. Experimental results revealed that Cu atoms preferentially occupy the Zn vacancies to decrease the carrier concentration at low concentrations of doping (x &lt; 0.05) and generate second phase of MgCuSb in x &#707; 0.05 samples, which enhances the power factor due to the suppression of the bipolar effect and modulation doping. Moreover, the lattice disorder caused by the aliovalent Cu substitution and the presence of MgCuSb phase strengthens phonon scattering and reduces the lattice thermal conductivity. Therefore, a maximum <i>zT</i> value of 0.60 is discovered at 673 K for the Mg<sub>1.77</sub>Cu<sub>0.05</sub>Zn<sub>1.175</sub>Ag<sub>0.03</sub>Sb<sub>2</sub> sample, which is 33% higher than that of the undoped Cu sample. Our research indicates that manipulating Zn vacancies with aliovalent Cu is a useful tactic for enhancing the thermoelectric performance of p-type Mg<sub>3</sub>Sb<sub>2</sub>-based materials.
%K p型Mg<sub>3</sub>Sb<sub>2</sub>&#65292
%K Zn空位&#65292
%K Cu取代&#65292
%K 热电性能<br>p-Type Mg<sub>3</sub>Sb<sub>2</sub>
%K Zn Vacancy
%K Cu Substitution
%K Thermoelectric Performance
%U http://www.hanspub.org/journal/PaperInformation.aspx?PaperID=108106