%0 Journal Article
%T Simulation Study of Nanoscale FDSOI MOSFET Characteristics
%A Towhid Adnan Chowdhury
%J Soft Nanoscience Letters
%P 13-22
%@ 2160-0740
%D 2023
%I Scientific Research Publishing
%R 10.4236/snl.2023.133002
%X Silicon on insulator (SOI) technology permits a good solution to the miniaturization as the MOSFET size scales down. This paper is about to compare the electrical performance of nanoscale FD-SOI MOSFET at various gate lengths. The performance is compared and contrasted with the help of threshold voltage, subthreshold slope, on-state current and leakage current. Interestingly, by decreasing the gate length, the leakage current and on-state current are increased but the threshold voltage is decreased and the sub-threshold slope is degraded. Silvaco two-dimensional simulations are used to analyze the performance of the proposed structures.
%K Fully Depleted
%K Silicon on Insulator
%K Threshold Voltage
%K Subthreshold Slope
%K Leakage Current
%K Gate Length
%U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=126379