%0 Journal Article
%T 氮化镓高电子迁移率晶体管的物理失效分析技术研究进展<br>Research Progress of Physical Failure Analysis Techniques for Gallium Nitride High Electron Mobility Transistors
%A 安蒙恩
%A 修慧欣
%J Applied Physics
%P 274-290
%@ 2160-7575
%D 2023
%I Hans Publishing
%R 10.12677/APP.2023.136032
%X 氮化镓(GaN)基高电子迁移率晶体管(HEMTs)由于具有高截止频率、高工作电压和工作温度范围广泛等特点，越来越多地应用于高频和高功率器件等电力电子领域。然而，在实际应用中，在高温高压等极端情况下，GaN HEMTs会出现退化甚至失效，这使得失效后器件的物理分析对于提高可靠性和进一步的器件优化至关重要。本文介绍了分析器件失效机制的分析方法，对失效后物理表征技术工作原理、表征范围及研究进展方面进行了简要综述，为进一步提高器件可靠性和器件的进一步优化提供了参考。<br />
Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) are increasingly used in power electronics fields such as high frequency and high power devices due to their high cut-off frequency, high operating voltage and wide operating temperature range. However, in practical applications, GaN HEMTs will degrade or even fail under extreme conditions such as high temperature and high pressure, which makes the physical analysis of the failed devices crucial for improving reliability and further device optimization. In this paper, the analysis methods of device failure mechanism are introduced. The working principle, characterization range and re-search progress of post-failure physical characterization technology are briefly reviewed, which provides a reference for further improving device reliability and further optimization of devices.
%K 氮化镓(GaN)，高电子迁移率晶体管(HEMT)，物理失效分析技术<br>Gallium Nitride (GaN)
%K High Electron Mobility Transistors (HEMT)
%K Physical Failure Analysis Technology
%U http://www.hanspub.org/journal/PaperInformation.aspx?PaperID=67203