%0 Journal Article
%T 石墨烯及其化学掺杂综述<br>Review of Graphene and Its Chemical Doping
%A 黄绍书
%J Modern Physics
%P 8-16
%@ 2161-0924
%D 2023
%I Hans Publishing
%R 10.12677/MP.2023.131002
%X 本文根据相关文献，对石墨烯及其化学掺杂予以综述。简介了石墨烯的发展状况、石墨烯在布里渊区的能带结构、石墨烯半导体的奇异零带隙特性和紧束缚条件下的Hamilton方程；着重介绍了替代掺杂和吸附掺杂中的n型掺杂、p型掺杂的一些具体方法，及其对石墨烯Dirac点附近的线性能量色散、Fermi面(能级)、载流子浓度等性质变化的影响。<br />
In this paper, graphene and its chemical doping are reviewed according to related literature. The development of graphene, the energy band structure of graphene in Brillouin zone, the singular zero band gap property of graphene semiconductors and Hamilton equation under tight binding conditions are briefly introduced; some specific methods of n-type doping and p-type doping in substitution doping and adsorption doping, as well as their effects on the linear energy dispersion, Fermi surface (energy level), carrier concentration and other properties near the Dirac point of graphene, are emphatically introduced.
%K 石墨烯，半导体特性，N型掺杂，P型掺杂，Graphene
%K Semiconductor Characteristics
%K N-Type Doping
%K P-Type Doping
%U http://www.hanspub.org/journal/PaperInformation.aspx?PaperID=60571