%0 Journal Article
%T 忆阻器原理与相关应用进展综述<br>Summary of the Principles and Related Applications of Memristors
%A 孙赫
%J Applied Physics
%P 311-318
%@ 2160-7575
%D 2021
%I Hans Publishing
%R 10.12677/APP.2021.116037
%X 忆阻器是继电阻、电感、电容后，人类发现的第四种无源基本电子元器件，其材料大致可分为五类：金属氧化物、钙钛矿、固态电介质、硫系化合物半导体、有机材料。由于忆阻器的非线性、非易失的特性，其具有极强的研究价值，并在存储器、与神经网络等领域中具有广阔的应用前景。本文总结了忆阻器的基本结构原理与材料，针对二元与多元金属氧化物类与钙钛矿类忆阻器现有研究进行了讨论，并在现有研究的基础上叙述其应用现状，最后对忆阻器的发展进行了全面总结与展望。在未来，忆阻器有望突破摩尔定率对硅基集成电路的限制，为电路优化与计算机体系结构的发展添砖加瓦。<br />
Memristor is the fourth kind of passive basic electronic components discovered by human beings after resistance, inductance and capacitance. Its materials can be roughly divided into five categories: binary metal oxides, perovskite, solid state dielectric, sulfide compound semiconductor and organic materials. Because of its non-linear and non-volatile characteristics, memristors are of great research value and have broad application prospects in memory, neural network and other fields. In this paper, the basic structural principles and materials of memristors are summarized, the existing research about binarymetal oxides and perovskite memristors are discussed, and their application status is described based on the existing research. Finally, the development of memristors is comprehensively summarized and prospected. In the future, memristors are expected to break through the limitations of molar rate on silicon based integrated circuits and contribute to the development of circuit optimization and computer architecture.
%K 忆阻器，神经网络，非易失性存储器，基本材料，工作原理<br>Memristor
%K Neural Network
%K Non-Volatile Memory
%K Basic Materials
%K The Working Principle
%U http://www.hanspub.org/journal/PaperInformation.aspx?PaperID=43425