%0 Journal Article
%T Mosaic Structure Analysis of InGaN / GaN LED Structures
%A £¿lknur Kars Durukan
%J -
%D 2018
%X In this study, Mosaic structures of InGaN / GaN light emitting diode (LED) structures produced by MOCVD method were analyzed. The effect of the InGaN / GaN barrier layer deposited on the sapphire substrate on the mosaic structure characterized by high resolution X-ray diffraction (HR-XRD) method. Our aim is to increase the quality of the LED structure by taking advantage of the mosaic structure calculations. Today, LEDs have a large market in the industry for the reason that they have a wide use. In particular, GaN-based LEDs, such as InGaN, operate at higher power, temperature and frequency ranges than arsenic-based LEDs. But GaN-based LEDs still have high defect densities. For this reason, we performed mosaic structure analysis in our work. In our calculations, Vegard and William's Hall quasi-experimental methods were used. We can say that the composition is an important factor leading to the reduction of edge and screw type defects
%K LED yap£¿lar
%K mozaik yap£¿ analizi
%K XRD
%K MOCVD
%U http://dergipark.org.tr/ejosat/issue/40225/429153