%0 Journal Article
%T Comparative study on the properties of CuInSe2 and CuGaSe2 thin film
%A £¿dris Candan
%J -
%D 2019
%X Two edge of Cu(In1-xGax)Se2 (CIGS) thin film semiconductors for x=0 (CuInSe2) and x=1 (CuGaSe2) have been produced onto the soda lime glass substrates at 250 oC by sputtering from Cu, InSe and GaSe targets. The effects of In and Ga ratio and the post-annealing at 350 oC and 400 oC on the properties of CuInSe2 (CIS) and CuGaSe2 (CGS) thin film samples have been investigated. The structural properties of the deposited films have been examined by using X-ray diffraction (XRD) and the compositions of samples were analyzed by performing energy dispersive X-ray diffraction analysis (EDXA) techniques. Raman spectra of thin film samples were studied at room temperature to determine the Raman active modes. The most intensive line (A1 modes) at 178 cm-1 and 185 cm-1 were observed for CIS and CGS thin films annealed at 400 oC, respectively. This is the most active mode detected in the Raman spectra of this type of chalcopyrite structures. For as-grown and annealed CGS thin films at 350 oC , the line 486 cm-1 was observed however intensity of this line decreased with increasing annealing temperature and totally disappeared after annealing at 400 oC. Optic transmission measurements showed that the deposited CIS and CGS thin films have optic band gap values for as grown and annealed (at 400 oC) samples changing from 1.28 eV to 1.45 eV and from 1.68 eV to 1.75 eV respectively. The room temperature electrical conductivities of the samples were measured as 8.6x10-3 and 13.6x10-2 (£¿.cm)-1 for n-type CIS thin film samples; 1.6 and 1.9 (£¿.cm)-1 for p-type CGS thin film samples before and after annealing at 400 oC, respectively
%K CIS
%K CGS
%K £¿nce Filmler
%K Sa£¿t£¿rma
%K XRD
%K Raman Spektroskopisi
%U http://dergipark.org.tr/ejosat/issue/43603/491331