%0 Journal Article
%T Low-Voltage-Operating Transistors and Logic Circuits Based on a Water-Driven ZrGdOx Dielectric with Low-Cost ZnSnO
%J -
%D 2019
%R https://doi.org/10.1021/acsaelm.9b00110
%X In current work, the nontoxic, ecofriendly, water-induced (WI) gadolinium doped zirconium oxide (ZrGdOx) gate dielectrics have been integrated with low-cost spin-coating-driven ZnSnO films for thin film transistors (TFTs) and logic circuits with superior performance for the first time. High transmittance over 90% and the formation of the metastable cubic phase of Zr2O have qualified its potential application in transparent electronics. ZnSnO films annealed at 430 ¡ãC integrated with ZrGdOx films demonstrate remarkable electrical properties and low-voltage operation (2 V), including a high current on/off ratio of ¡«1.1 ¡Á 106, large saturation carrier mobility of ¡«3.1 cm2 V¨C1 S¨C1, extreme low leakage current density of 6 ¡Á 10¨C10 A cm¨C2, and a slight shift in threshold voltage of 0.26 V for bias stability, respectively. To verify the practicability in logic circuits, the resistor-loaded inverters are built by using ZrGdOx/ZnSnO TFTs. This work first put forward and verified that WI gate dielectrics can be favorable to a heterogeneous clean interface with a solution-derived ZnSnO channel layer, taking an important step toward a low-operating voltage and ecofriendly flexible integrated circuit
%U https://pubs.acs.org/doi/10.1021/acsaelm.9b00110