%0 Journal Article
%T Gigahertz Field-Effect Transistors with CMOS-Compatible Transfer-Free Graphene
%J -
%D 2019
%R https://doi.org/10.1021/acsami.8b16957
%X High-quality graphene grown on metal-free substrates represents a vital milestone that provides an atomic clean interface and a complementary metal-oxide-semiconductor-compatible manufacturing process for electronic applications. We report a scalable approach to fabricate radio frequency field-effect transistors with a graphene channel grown directly on the sapphire substrate using the technique of remote-catalyzed chemical vapor deposition (CVD). A mushroom-shaped AlOx top gate is used to allow the self-aligned drain/source contacts, yielding remarkable increase of device transconductance and reduction of the associated parasitic resistance. The quality of thus-grown graphene is reflected in the high extrinsic cutoff frequency and maximum oscillation frequency of 10.1 and 5.6 GHz for the graphene channel of length 200 nm and width 80 ¦Ìm, respectively, potentially comparable with those of transferred CVD graphene at the same channel length and holding promise for applications in high-speed wireless communications
%U https://pubs.acs.org/doi/10.1021/acsami.8b16957