%0 Journal Article
%T Spray-Coated CsPbBr3 Quantum Dot Films for Perovskite Photodiodes
%J -
%D 2018
%R https://doi.org/10.1021/acsami.8b07334
%X Large-area film deposition and high material utilization ratio are the crucial factors for large-scale application of perovskite optoelectronics. Recently, all-inorganic halide perovskite CsPbBr3 has attracted great attention because of its high phase stability, thermal stability, and photostability. However, most reported perovskite devices were fabricated by spin-coating, suffering from a low material utilization ratio of 1% and a small coverage area. Here, we developed a spray-coating technique to fabricate a CsPbBr3 quantum dot (QD) film photodiode which had a high material utilization ratio of 32% and a deposition rate of 9 nm/s. The film growth process was studied, and substrate temperature and spray time were two key factors for the deposition of uniform and crack-free QD films. The spray-coated photodiode was demonstrated to be more suitable for working in the photodetector mode because a low dark current density of 4 ¡Á 10¨C4 mA cm¨C2 resulting from an extremely low recombination current contributed to a high detectivity of 1 ¡Á 1014 Jones. A high responsivity of 3 A W¨C1 was obtained at £¿0.7 V under 365 nm illumination, resulting from a low charge-transfer resistance and a high charge recombination resistance. We believe that the spray deposition technique will benefit the fabrication of perovskite QD film optoelectronics on a large scale
%U https://pubs.acs.org/doi/10.1021/acsami.8b07334