%0 Journal Article
%T Heterostructure WSe2£¿Ga2O3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics
%J -
%D 2018
%R https://doi.org/10.1021/acsami.8b07030
%X Layered materials separated from each bulk crystal can be assembled to form a strain-free heterostructure by using the van der Waals interaction. We demonstrated a heterostructure n-channel depletion-mode ¦Â-Ga2O3 junction field-effect transistor (JFET) through van der Waals bonding with an exfoliated p-WSe2 flake. Typical diode characteristics with a high rectifying ratio of ¡«105 were observed in a p-WSe2/n-Ga2O3 heterostructure diode, where WSe2 and ¦Â-Ga2O3 were obtained by mechanically exfoliating each crystal. Layered JFETs exhibited an excellent IDS¨CVDS output as well as IDS¨CVGS transfer characteristics with a high on/off ratio (¡«108) and low subthreshold swing (133 mV/dec). Saturated output currents were observed with a threshold voltage of £¿5.1 V and a three-terminal breakdown voltage of +144 V. Electrical performances of the fabricated heterostructure JFET were maintained at elevated temperatures with outstanding air stability. Our WSe2¨CGa2O3 heterostructure JFET paves the way to the low-dimensional high-power devices, enabling miniaturization of the integrated power electronic systems
%U https://pubs.acs.org/doi/10.1021/acsami.8b07030