%0 Journal Article
%T Negative capacitance from the inductance of ferroelectric switching
%J -
%D 2019
%R https://doi.org/10.1038/s42005-019-0120-1
%X Negative capacitance (NC) has been proposed to realize sub-Boltzmann steep-slope transistors in recent years. We provide experimental evidences and theoretical view for ferroelectric NC and inductance induced by polarization switching, based on an as-deposited nanoscale ferroelectric zirconium oxide (ZrO2) layer (nano-f-ZrO2). The experimental results are demonstrated in nano-f-ZrO2, including resistor¨Cinductor¨Ccapacitor oscillations, positive reactance in Nyquist impedance plot, enhancement of capacitance, and sub-60£¿mV/dec subthreshold swing of nanoscale transistors. The theoretical analysis shows that ferroelectric polarization switching yields an effective electromotive force which is similar in behavior to Lenz¡¯s law, leading to inductive and NC responses. Nano-beam electron diffraction reveals ferroelectric multi-domains in nano-f-ZrO2. Under small-signal operation, the switching of net polarization variation in ferroelectric multi-domains contributes to the ferroelectric inductance and NC. Nano-f-ZrO2 provides a pronounced inductance compared to conventional inductors, which would have impacts in a variety of applications including transistors, filters, oscillators, and radio-frequency-integrated circuits
%U https://www.nature.com/articles/s42005-019-0120-1