%0 Journal Article
%T Magneto-ionic control of magnetism using a solid-state proton pump
%J -
%D 2018
%R https://doi.org/10.1038/s41563-018-0211-5
%X Voltage-gated ion transport as a means of manipulating magnetism electrically could enable ultralow-power memory, logic and sensor technologies. Earlier work made use of electric-field-driven O2ˋ displacement to modulate magnetism in thin films by controlling interfacial or bulk oxidation states. However, elevated temperatures are required and chemical and structural changes lead to irreversibility and device degradation. Here we show reversible and non-destructive toggling of magnetic anisotropy at room temperature using a small gate voltage through H+ pumping in all-solid-state heterostructures. We achieve 90∼ magnetization switching by H+ insertion at a Co/GdOx interface, with no degradation in magnetic properties after >2,000 cycles. We then demonstrate reversible anisotropy gating by hydrogen loading in Pd/Co/Pd heterostructures, making metal每metal interfaces susceptible to voltage control. The hydrogen storage metals Pd and Pt are high spin每orbit coupling materials commonly used to generate perpendicular magnetic anisotropy, Dzyaloshinskii每Moriya interaction, and spin每orbit torques in ferromagnet/heavy-metal heterostructures. Thus, our work provides a platform for voltage-controlled spin每orbitronics
%U https://www.nature.com/articles/s41563-018-0211-5