%0 Journal Article
%T Monolayer MoS2 field-effect transistors patterned by photolithography for active matrix pixels in organic light-emitting diodes
%J -
%D 2019
%R https://doi.org/10.1038/s41699-019-0091-9
%X Two-dimensional molybdenum disulfide (MoS2) has substantial potential as a semiconducting material for devices. However, it is commonly prepared by mechanical exfoliation, which limits flake size to only a few micrometers, which is not sufficient for processes such as photolithography and circuit patterning. Chemical vapor deposition (CVD) has thus become a mainstream fabrication technique to achieve large-area MoS2. However, reports of conventional photolithographic patterning of large-area 2D MoS2-based devices with high mobilities and low switching voltages are rare. Here we fabricate CVD-grown large-area MoS2 field-effect transistors (FETs) by photolithography and demonstrate their potential as switching and driving FETs for pixels in analog organic light-emitting diode (OLED) displays. We spin-coat an ultrathin hydrophobic polystyrene layer on an Al2O3 dielectric, so that the uniformity of threshold voltage (Vth) of the FETs might be improved. Our MoS2 FETs show a high linear mobility of approximately 10£¿cm2£¿V£¿1£¿s£¿1, due to a large grain size around 60£¿¦Ìm, and a high ON/OFF current ratio of 108. Dynamic switching of blue and green OLED pixels is shown at ~5£¿V, demonstrating their application potential
%U https://www.nature.com/articles/s41699-019-0091-9