%0 Journal Article
%T Band gap Measurement of P ¨C type Monocrystalline Silicon Wafer
%A G Hashmi
%A M Hoq
%A MH Rahman
%A MK Basher
%J Bangladesh Journal of Scientific and Industrial Research
%D 2018
%R https://doi.org/10.3329/bjsir.v53i3.38263
%X Band gap of P-type monocrystalline silicon wafer has been measured using spectral response measurement system. To see the spectral response a SR510 lock in amplifier, SR540 optical chopper, monochromator (400nm-1200nm), optical detector and lab view software has been used. From spectral response of polished P-type monocrystalline silicon wafer absorption, reflection and transmission has been respectively seen from 400nm-550nm, 550nm-1050nm and 1050-1200nm. Assuming band gap of silicon is (1.12eV), this result has been theoretically verified using Planck¨CEinstein relation. Moreover, theoretical band gap of silicon has been calculated (1.127362 eV). The band gap measurement process uses partial concept of Tauc¡¯s downhill negative slop and Planck¨CEinstein relation. Experimental result shows that, the band gap of silicon is 1.127907 eV. Bangladesh J. Sci. Ind. Res.53(3), 179-184, 2018
%K Spectral response
%K Band gap
%K Planck-Einstein equation
%K Silicon wafer
%K Intrinsic carrier concentration
%U https://www.banglajol.info/index.php/BJSIR/article/view/38263