%0 Journal Article
%T Measurement Process of MOSFET Device Parameters with VEE Pro Software for DP4T RF Switch
%A Viranjay M. Srivastava
%A K. S. Yadav
%A G. Singh
%J Int'l J. of Communications, Network and System Sciences
%P 590-600
%@ 1913-3723
%D 2011
%I Scientific Research Publishing
%R 10.4236/ijcns.2011.49071
%X To design a Double-Pole Four-Throw (DP4T) RF switch, measurement of device parameters is required. In this DP4T RF switch CMOS is a unit cell, so with a thin oxide layer of thickness 628 Å which is measured optically. Some of the material parameters were found by the curve drawn between Capacitance versus Voltage (C-V) and Capacitance versus Frequency (C-F) with the application of Visual Engineering Environment Programming (VEE Pro). To perform the measurement processing at a distance, from the hazardous room, we use VEE Pro software. In this research, to acquire a fine result for RF MOSFET, we vary the voltage with minor increments and perform the measurements by vary the applying voltage from +5 V to ¨C5 V and then back to +5 V again and then save this result in a data sheet with respect to temperature, voltage and frequency using this program. We have investigated the characteristics of RF MOSFET, which will be used for the wireless telecommunication systems.
%K Capacitance-Frequency Curve
%K Capacitance-Voltage Curve
%K DP4T Switch
%K LCR Meter
%K MOS Device
%K Radio Frequency
%K RF Switch
%K Testing
%K VEE Pro
%K VLSI
%U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=7226