%0 Journal Article
%T Research on Degradation of GaN-Based Blue LED Caused by ¦Ã Radiation under Low Bias
%A Fang
%A Zeping
%A Liu
%A Xiao-yong
%A Lu
%A Xiangyang
%A Xu
%A Jinglei
%A Yu
%A Fajun
%A Zhao
%A Qifeng
%J -
%D 2020
%R https://doi.org/10.1155/2020/1592695
%X GaN multiquantum-well blue light-emitting diodes (LEDs) were radiated with 60Co ¦Ã-rays for accumulated doses up to 2.5£¿Mrad (SiO2). The radiation-induced current and 1/f noise degradations were studied when the devices operate at the low bias voltage. The current increased by 2.31 times, and the 1/f noise increased by 275.69 times after a dose of 2.5£¿Mrad (SiO2). Based on Hurkx¡¯s trap-assisted tunneling model, the degradation of current was explained. ¦Ã radiation created defects in the space-charge region of LEDs. These defects as generation-recombination centers lead to the increase in the current. In addition, based on the quantum l/f noise theory, the degradation of 1/f noise might be also attributed to these defects, which caused an increase in the Hooge constant and a decrease in the carrier lifetimes. The current and 1/f noise degradations can be attributed to the same physical origin. Compared to the current, the 1/f noise parameter is more sensitive, so it may be used to evaluate the radiation resistance capability of GaN blue LEDs
%U https://www.hindawi.com/journals/ijo/2020/1592695/