%0 Journal Article
%T Impact of cation compositions on the performance of thin-film transistors with amorphous indium gallium zinc oxide grown through atomic layer deposition
%A Hyunjoo Seul
%A Jae Kyeong Jeong
%A Jong Uk Bae
%A Kwon-Shik Park
%A Min Hoe Cho
%A Min Jae Kim
%A Pil Sang Yun
%J Journal of Information Display
%D 2019
%R https://doi.org/10.1080/15980316.2018.1540365
%X ABSTRACT This paper reports the effect of the cation composition on the electrical properties of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) where atomic layer deposition (ALD) was used to deposit an a-IGZO channel layer. The In0.38Ga0.18Zn0.44O transistors at a 200¡ãC annealing temperature exhibited 39.4£¿cm2/V¡¤s field effect mobility (¦ÌFE), £¿0.12£¿V threshold voltage (VTH), 0.40£¿V/decade subthreshold gate swing (SS), and >107 ION/OFF ratio, corresponding to the state-of-the-art characteristics of transistors with a sputtered IGZO channel. Further enhancement of the ¦ÌFE value was observed for the devices with a higher In fraction: the In0.45Ga0.15Zn0.40O transistor had a higher ¦ÌFE value of 48.3£¿cm2/V¡¤s, £¿4.06£¿V VTH, 0.45£¿V/decade SS, and >107 ION/OFF ratio. The cation composition dependence on the performance of the a-IGZO TFTs was explained by analysing the density-of-state (DOS) distribution for the corresponding devices using the experimental independent variable (IV) and theoretical Technology Computer-aided Design (TCAD) simulation
%U https://www.tandfonline.com/doi/full/10.1080/15980316.2018.1540365