%0 Journal Article
%T Low-temperature growth of epitaxial Ti2AlC MAX phase thin films by low-rate layer-by-layer PVD
%A A. V. Pshyk
%A B. Scheibe
%A E. Coy
%A M. Kempi¨˝ski
%A S. Jurga
%J Materials Research Letters
%D 2019
%R https://doi.org/10.1080/21663831.2019.1594428
%X ABSTRACT Here we report on the structural and tribo-mechanical characterization of epitaxial single-crystalline Ti2AlC MAX phase thin films, grown by means of electron beam physical vapor deposition at relatively low temperature (700ˇăC). The growth of phase pure Ti2AlC at a relatively lower temperature when compared to other PVD methods was achieved utilizing a relatively low deposition rate and layer-by-layer deposition technique. The epitaxial growth is evidenced through the combination of XRD, HR-TEM and Raman spectroscopy measurements. The nanomechanical and micro-scale tribological properties of the Ti2AlC thin films were studied by means of nanoindentation and nanoscratch tests. GRAPHICAL ABSTRACT IMPACT STATEMENT The growth temperature of phase pure single-crystalline Ti2AlC MAX phase thin films was reduced to 700ˇăC utilizing the low-rate layer-by-layer PVD technique
%U https://www.tandfonline.com/doi/full/10.1080/21663831.2019.1594428