%0 Journal Article
%T Operando diagnostic detection of interfacial oxygen ¡®breathing¡¯ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy
%A Andrei Gloskovskii
%A Christian Wenger
%A Eduardo Perez
%A Florian B£¿rwolf
%A Gang Niu
%A Jinfeng Kang
%A Karol Fr£¿hlich
%A Lambert Alff
%A Markus Andreas Schubert
%A Pauline Calka
%A Peng Huang
%A Sankaramangalam Ulhas Sharath
%A Stefan Petzold
%A Thomas Schroeder
%A Wei Ren
%A Yudi Zhao
%A Zuo-Guang Ye
%J Materials Research Letters
%D 2019
%R https://doi.org/10.1080/21663831.2018.1561535
%X ABSTRACT The HfO2-based resistive random access memory (RRAM) is one of the most promising candidates for non-volatile memory applications. The detection and examination of the dynamic behavior of oxygen ions/vacancies are crucial to deeply understand the microscopic physical nature of the resistive switching (RS) behavior. By using synchrotron radiation based, non-destructive and bulk-sensitive hard X-ray photoelectron spectroscopy (HAXPES), we demonstrate an operando diagnostic detection of the oxygen ¡®breathing¡¯ behavior at the oxide/metal interface, namely, oxygen migration between HfO2 and TiN during different RS periods. The results highlight the significance of oxide/metal interfaces in RRAM, even in filament-type devices. GRAPHICAL ABSTRACT IMPACT STATEMENT The oxygen ¡®breathing¡¯ behavior at the oxide/metal interface of filament-type resistive random access memory devices is operandoly detected using hard X-ray photoelectron spectroscopy as a diagnostic tool
%U https://www.tandfonline.com/doi/full/10.1080/21663831.2018.1561535