%0 Journal Article
%T P-Type Lithium Niobate Thin Films Fabricated by Nitrogen-Doping
%J Materials | An Open Access Journal from MDPI
%D 2019
%R https://doi.org/10.3390/ma12050819
%X Nitrogen-doped lithium niobate (LiNbO 3:N) thin films were successfully fabricated on a Si-substrate using a nitrogen plasma beam supplied through a radio-frequency plasma apparatus as a dopant source via a pulsed laser deposition (PLD). The films were then characterized using X-Ray Diffraction (XRD) as polycrystalline with the predominant orientations of (012) and (104). The perfect surface appearance of the film was investigated by atomic force microscopy and Hall-effect measurements revealed a rare p-type conductivity in the LiNbO 3:N thin film. The hole concentration was 7.31 ¡Á 10 15 cm £¿3 with a field-effect mobility of 266 cm 2V £¿1s £¿1. X-ray Photoelectron Spectroscopy (XPS) indicated that the atom content of nitrogen was 0.87%; N atoms were probably substituted for O sites, which contributed to the p-type conductivity. The realization of p-type LiNbO 3:N thin films grown on the Si substrate lead to improvements in the manufacturing of novel optoelectronic devices. View Full-Tex
%U https://www.mdpi.com/1996-1944/12/5/819