%0 Journal Article
%T The Effect of Cu and Ga Doped ZnIn2S4 under Visible Light on the High Generation of H2 Production
%J ChemEngineering | An Open Access Journal from MDPI
%D 2019
%R https://doi.org/10.3390/chemengineering3040079
%X A Cu + and Ga 3+ co-doped ZnIn 2S 4 photocatalyst (Zn (1£¿2x)(CuGa) xIn 2S 4) with controlled band gap was prepared via a simple one-step solvothermal method. Zn (1£¿2x)(CuGa) xIn 2S 4 acted as an efficient photocatalyst for H 2 evolution under visible light irradiation (¦Ë > 420 nm; 4500 ¦ÌW/cm 2). The effects of the (Cu and Ga)/Zn molar ratios of Zn (1£¿2x)(CuGa) xIn 2S 4 on the crystal structure (hexagonal structure), morphology (microsphere-like flower), optical property (light harvesting activity and charge hole separation ability), and photocatalytic activity have been investigated in detail. The maximum H 2 evolution rate (1650 ¦Ìmol¡¤h £¿1¡¤g £¿1) was achieved over Zn 0.84(CuGa) 0.13In 2S 4, showing a 3.3 times higher rate than that of untreated ZnIn 2S 4. The bandgap energy of Zn (1£¿2x)(CuGa) xIn 2S 4 decreased from 2.67 to 1.90 eV as the amount of doping Cu + and Ga 3+ increased. View Full-Tex
%U https://www.mdpi.com/2305-7084/3/4/79