%0 Journal Article
%T Leakage Current Conduction Mechanism of Au-Pt-Ti/ HfO2-Al2O3/n-InAlAs Metal-Oxide-Semiconductor Capacitor under Reverse-Biased Condition
%J Coatings | An Open Access Journal from MDPI
%D 2019
%R https://doi.org/10.3390/coatings9110720
%X Au-Pt-Ti/high-k/n-InAlAs metal-oxide-semiconductor (MOS) capacitors with HfO 2-Al 2O 3 laminated dielectric were fabricated. We found that a Schottky emission leakage mechanism dominates the low bias conditions and Fowler¨CNordheim tunneling became the main leakage mechanism at high fields with reverse biased condition. The sample with HfO 2 (4 m)/Al 2O 3 (8 nm) laminated dielectric shows a high barrier height £¿B of 1.66 eV at 30 ¡ãC which was extracted from the Schottky emission mechanism, and this can be explained by fewer In¨CO and As¨CO states on the interface, as detected by the X-ray photoelectron spectroscopy test. These effects result in HfO 2 (4 m)/Al 2O 3 (8 nm)/ n-InAlAs MOS-capacitors presenting a low leakage current density of below 1.8 ¡Á 10 £¿7 A/cm 2 from £¿3 to 0 V at 30 ¡ãC. It is demonstrated that the HfO 2/Al 2O 3 laminated dielectric with a thicker Al 2O 3 film of 8 nm is an optimized design to be the high- k dielectric used in Au-Pt-Ti/HfO 2-Al 2O 3/InAlAs MOS capacitor applications. View Full-Tex
%U https://www.mdpi.com/2079-6412/9/11/720