%0 Journal Article
%T Structural and Electrical Parameters of ZnO Thin Films Grown by ALD with either Water or Ozone as Oxygen Precursors
%J Crystals | An Open Access Journal from MDPI
%D 2019
%R https://doi.org/10.3390/cryst9110554
%X Low temperature (at 100 ˇăC and below) growth of ZnO thin films by atomic layer deposition (ALD) is demonstrated. Properties of the layers grown with two different oxygen reagents: ozone and water are compared. Diethylzinc (DEZ) was used as metal precursor. Electrical and structural properties of films obtained at several different growth temperatures, ranging from 50 ˇăC to 250 ˇăC were analyzed. It turned out that the film grown in the water-based process at 250 ˇăC and all films grown with ozone have more ordered crystallographic structure with the privileged growth direction (001) perpendicular to the substrate than water-based samples grown in temperatures 100¨C200 ˇăC. Higher free electron concentration at room temperature was observed for ozone-based samples grown at 100 ˇăC and 150 ˇăC in comparison to water-based samples obtained at the same growth temperature. Low value of resistivity in case of ozone-based samples grown at 100 ˇăC is a promising result, however lower electron mobility requires further optimization. View Full-Tex
%U https://www.mdpi.com/2073-4352/9/11/554