%0 Journal Article
%T Design and Optimization of Germanium-Based Gate-Metal-Core Vertical Nanowire Tunnel FET
%J Micromachines | An Open Access Journal from MDPI
%D 2019
%R https://doi.org/10.3390/mi10110749
%X In this paper, a germanium-based gate-metal-core vertical nanowire tunnel field effect transistor (VNWTFET) has been designed and optimized using the technology computer-aided design (TCAD) simulation. In the proposed structure, by locating the gate-metal as a core of the nanowire, a more extensive band-to-band tunneling (BTBT) area can be achieved compared with the conventional core¨Cshell VNWTFETs. The channel thickness (Tch), the gate-metal height (Hg), and the channel height (Hch) were considered as the design parameters for the optimization of device performances. The designed gate-metal-core VNWTFET exhibits outstanding performance, with an on-state current (Ion) of 80.9 ¦ÌA/¦Ìm, off-state current (Ioff) of 1.09 ¡Á 10£¿12 A/¦Ìm, threshold voltage (Vt) of 0.21 V, and subthreshold swing (SS) of 42.8 mV/dec. Therefore, the proposed device was demonstrated to be a promising logic device for low-power applications
%U https://www.mdpi.com/2072-666X/10/11/749