%0 Journal Article
%T Radiation Induced Enhancement of Hydrogen Influence on Luminescent Properties of nc-Si/SiO2 Structures
%A Igor Lisovskyy
%A Iurii Nasieka
%A Mariia Voitovych
%A Vasyl Voitovych
%A Viktor Bratus
%A Volodymyr Litovchenko
%J Archive of "Nanoscale Research Letters".
%D 2016
%R 10.1186/s11671-016-1744-7
%X Using photo-luminescence, infrared spectroscopy, and electron spin resonance technique, the silicon dioxide films with embedded silicon nanocrystals (nc-Si/SiO2 structures) have been investigated after ¦Ã-irradiation with the dose 2£¿¡Á£¿107 rad and subsequent annealing at 450£¿¡ãC in hydrogen ambient. For the first time, it was shown that such a radiation-thermal treatment results in significant increase of the luminescence intensity, in a red shift of the photoluminescence spectra, and in disappearance of the electron-spin resonance signal related to silicon broken bonds. This effect has been explained by passivation of silicon broken bonds at the nc-Si¨CSiO2 interface with hydrogen and by generation of new luminescence centers, these centers being created at elevated temperatures due to transformation of radiation-induced defects
%K Si nanocrystals
%K SiO2 films
%K Photoluminescence
%K Infrared spectroscopy
%K Electron-spin resonance
%K ¦Ã-irradiation
%K Radiation defects
%U https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5143333/