%0 Journal Article
%T Growth and Self-Assembly of Silicon每Silicon Carbide Nanoparticles into Hybrid Worm-Like Nanostructures at the Silicon Wafer Surface
%A Andres Mauricio Espinoza-Rivas
%A Jaime Santoyo-Salazar
%A Juan Morales-Corona
%A Manuel Alejandro Perez-Guzman
%A Mauricio Ortega-Lopez
%A Rebeca Ortega-Amaya
%A Yasuhiro Matsumoto
%J Archive of "Nanomaterials".
%D 2018
%R 10.3390/nano8110954
%X This work describes the growth of silicon每silicon carbide nanoparticles (Si每SiC) and their self-assembly into worm-like 1D hybrid nanostructures at the interface of graphene oxide/silicon wafer (GO/Si) under Ar atmosphere at 1000 ∼C. Depending on GO film thickness, spread silicon nanoparticles apparently develop on GO layers, or GO-embedded Si每SiC nanoparticles self-assembled into some-micrometers-long worm-like nanowires. It was found that the nanoarrays show that carbon每silicon-based nanowires (CSNW) are standing on the Si wafer. It was assumed that Si nanoparticles originated from melted Si at the Si wafer surface and GO-induced nucleation. Additionally, a mechanism for the formation of CSNW is proposed
%K silicon
%K silicon carbide
%K nanoparticles
%K nanowires
%K graphene oxide
%K self-assembly
%K thermal reduction
%U https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6266479/