%0 Journal Article
%T Multi-Level Cell Properties of a Bilayer Cu2O/Al2O3 Resistive Switching Device
%A Andreas Klein
%A Asal Kiazadeh
%A Elvira Fortunato
%A Jonas Deuermeier
%A Rodrigo Martins
%J Archive of "Nanomaterials".
%D 2019
%R 10.3390/nano9020289
%X Multi-level resistive switching characteristics of a Cu2O/Al2O3 bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of the copper oxide¡ªan unusual property for an oxide semiconductor¡ªare discussed for the first time regarding their role in the resistive switching mechanism
%K resistive switching memories
%K multi-level cell
%K copper oxide
%K grain boundaries
%K aluminum oxide
%U https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6410279/