%0 Journal Article
%T The Luminescent Inhomogeneity and the Distribution of Zinc Vacancy-Related Acceptor-Like Defects in N-Doped ZnO Microrods
%A Jiandong Ye
%A Kun Tang
%A Shulin Gu
%A Shunming Zhu
%A Zhengrong Yao
%A Zhonghua Xu
%J Archive of "Nanoscale Research Letters".
%D 2016
%R 10.1186/s11671-016-1736-7
%X Vertically aligned N-doped ZnO microrods with a hexagonal symmetry were fabricated via the chemical vapor transport with abundant N2O as both O and N precursors. We have demonstrated the suppression of the zinc interstitial-related shallow donor defects and have identified the zinc vacancy-related shallow and deep acceptor states by temperature variable photoluminescence in O-rich growth environment. Through spatially resolved cathodoluminescence spectra, we found the luminescent inhomogeneity in the sample with a core-shell structure. The deep acceptor-isolated VZn and the shallow acceptor VZn-related complex or clusters mainly distribute in the shell region
%K Zinc oxide
%K Microrod
%K Chemical vapor transport
%K Defect identification and distribution
%K Spatially resolved cathodoluminescence
%U https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5120051/