%0 Journal Article
%T Two Dimensional ¦Â-InSe with Layer-Dependent Properties: Band Alignment, Work Function and Optical Properties
%A David K. Sang
%A Dianyuan Fan
%A Han Zhang
%A Huide Wang
%A Jinlai Zhao
%A Meng Qiu
%A Quanlan Xiao
%A Rui Cao
%A Yu Li
%A Zhinan Guo
%J Archive of "Nanomaterials".
%D 2019
%R 10.3390/nano9010082
%X Density functional theory calculations of the layer (L)-dependent electronic band structure, work function and optical properties of ¦Â-InSe have been reported. Owing to the quantum size effects (QSEs) in ¦Â-InSe, the band structures exhibit direct-to-indirect transitions from bulk ¦Â-InSe to few-layer ¦Â-InSe. The work functions decrease monotonically from 5.22 eV (1 L) to 5.0 eV (6 L) and then remain constant at 4.99 eV for 7 L and 8 L and drop down to 4.77 eV (bulk ¦Â-InSe). For optical properties, the imaginary part of the dielectric function has a strong dependence on the thickness variation. Layer control in two-dimensional layered materials provides an effective strategy to modulate the layer-dependent properties which have potential applications in the next-generation high performance electronic and optoelectronic devices
%K Layer-dependent
%K Indium Selenide
%K density functional theory
%K work function
%K optical properties
%U https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6358860/