%0 Journal Article
%T Ternary Memristic Effect of Trilayer-Structured Graphene-Based Memory Devices
%A Lei Li
%J Archive of "Nanomaterials".
%D 2019
%R 10.3390/nano9040518
%X A tristable memory device with a trilayer structure utilizes poly(methyl methacrylate) (PMMA) sandwiched between double-stacked novel nanocomposite films that consist of 2-(4-tert-butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole (PBD) doped with graphene oxide (GO). We successfully fabricated devices consisting of single and double GO@PBD nanocomposite films embedded in polymer layers. These devices had binary and ternary nonvolatile resistive switching behaviors, respectively. Binary memristic behaviors were observed for the device with a single GO@PBD nanocomposite film, while ternary behaviors were observed for the device with the double GO@PBD nanocomposite films. The heterostructure GO@PBD/PMMA/GO@PBD demonstrated ternary charge transport on the basis of I¨CV fitting curves and energy-band diagrams. Tristable memory properties could be enhanced by this novel trilayer structure. These results show that the novel graphene-based memory devices with trilayer structure can be applied to memristic devices. Charge trap materials with this innovative architecture for memristic devices offer a novel design scheme for multi-bit data storage
%K GO@PBD/PMMA/GO@PBD heterostructure
%K ternary trilayer-structured memristor
%K graphene-based memory
%K tristable memory
%U https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6524159/