%0 Journal Article
%T Optoelectronic and Electrochemical Properties of Vanadium Pentoxide Nanowires Synthesized by Vapor-Solid Process
%A Da-Hua Wei
%A Ko-Ying Pan
%J Archive of "Nanomaterials".
%D 2016
%R 10.3390/nano6080140
%X Substantial synthetic vanadium pentoxide (V2O5) nanowires were successfully produced by a vapor-solid (VS) method of thermal evaporation without using precursors as nucleation sites for single crystalline V2O5 nanowires with a (110) growth plane. The micromorphology and microstructure of V2O5 nanowires were analyzed by scanning electron microscope (SEM), energy-dispersive X-ray spectroscope (EDS), transmission electron microscope (TEM) and X-ray diffraction (XRD). The spiral growth mechanism of V2O5 nanowires in the VS process is proved by a TEM image. The photo-luminescence (PL) spectrum of V2O5 nanowires shows intrinsic (410 nm and 560 nm) and defect-related (710 nm) emissions, which are ascribable to the bound of inter-band transitions (V 3d conduction band to O 2p valence band). The electrical resistivity could be evaluated as 64.62 ¦¸¡¤cm via four-point probe method. The potential differences between oxidation peak and reduction peak are 0.861 V and 0.470 V for the first and 10th cycle, respectively
%K V2O5 nanowires
%K VS method
%K spiral growth mechanism
%K screw dislocation
%K PL spectrum
%K four-point probe method
%K electrical resistivity
%K cyclic voltammetric curve
%U https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5224621/