%0 Journal Article
%T A HfO2/SiTe Based Dual-Layer Selector Device with Minor Threshold Voltage Variation
%A Bing Song
%A Haijun Liu
%A Hui Xu
%A Qingjiang Li
%A Rongrong Cao
%A Sen Liu
%J Archive of "Nanomaterials".
%D 2019
%R 10.3390/nano9030408
%X Volatile programmable metallization cell is a promising threshold switching selector with excellent characteristics and simple structures. However, the large variation of threshold voltage is a major problem for practical application. In this work, we propose a dual-layer structure to increase selectivity and improve the threshold voltage variation. Compared to single-layer devices, this dual-layer device exhibits higher selectivity (>107) and better threshold voltage uniformity with less than 5% fluctuation during 200 DC switching. The improvement is attributed to good control on the location of the filament formation and rupture after introducing a HfO2 layer. It is deduced that a major factor consists of the difference of Ag ions mobility between SiTe and HfO2 due to the grain boundary quantity
%K chalcogenide
%K memristor
%K resistive random access memory
%K dual-layer
%K threshold switching selector
%U https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6474026/