%0 Journal Article
%T Pinch-Off Formation in Monolayer and Multilayers MoS2 Field-Effect Transistors
%A Ronen Dagan
%A Yonatan Vaknin
%A Yossi Rosenwaks
%J Archive of "Nanomaterials".
%D 2019
%R 10.3390/nano9060882
%X The discovery of layered materials, including transition metal dichalcogenides (TMD), gives rise to a variety of novel nanoelectronic devices, including fast switching field-effect transistors (FET), assembled heterostructures, flexible electronics, etc. Molybdenum disulfide (MoS2), a transition metal dichalcogenides semiconductor, is considered an auspicious candidate for the post-silicon era due to its outstanding chemical and thermal stability. We present a Kelvin probe force microscopy (KPFM) study of a MoS2 FET device, showing direct evidence for pinch-off formation in the channel by in situ monitoring of the electrostatic potential distribution along the conducting channel of the transistor. In addition, we present a systematic comparison between a monolayer MoS2 FET and a few-layer MoS2 FET regarding gating effects, electric field distribution, depletion region, and pinch-off formation in such devices
%K 2D materials
%K KPFM
%K MoS2
%K pinch-off
%U https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6630314/