%0 Journal Article
%T The Way towards Ultrafast Growth of Singleİ\Crystal Graphene on Copper
%A Feng Ding
%A Hailin Peng
%A Lu Qiu
%A Shaoxin Wang
%A Tianwei Wu
%A Xiaozhi Xu
%A Zhihong Zhang
%J Archive of "Advanced Science".
%D 2017
%R 10.1002/advs.201700087
%X The exceptional properties of graphene make it a promising candidate in the development of nextİ\generation electronic, optoelectronic, photonic and photovoltaic devices. A holy grail in graphene research is the synthesis of largeİ\sized singleİ\crystal graphene, in which the absence of grain boundaries guarantees its excellent intrinsic properties and high performance in the devices. Nowadays, most attention has been drawn to the suppression of nucleation density by using low feeding gas during the growth process to allow only one nucleus to grow with enough space. However, because the nucleation is a random event and new nuclei are likely to form in the very long growth process, it is difficult to achieve industrialİ\level waferİ\scale or beyond (e.g. 30 cm in diameter) singleİ\crystal graphene. Another possible way to obtain large singleİ\crystal graphene is to realize ultrafast growth, where once a nucleus forms, it grows up so quickly before new nuclei form. Therefore ultrafast growth provides a new direction for the synthesis of large singleİ\crystal graphene, and is also of great significance to realize largeİ\scale production of graphene films (fast growth is more timeİ\efficient and costİ\effective), which is likely to accelerate various graphene applications in industry
%K Cu foil
%K CVD
%K single crystal
%K ultrafast graphene growth
%U https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5604388/