%0 Journal Article
%T Electrically Robust Single©\Crystalline WTe2 Nanobelts for Nanoscale Electrical Interconnects
%A Do Hee Lee
%A Hyeonsik Cheong
%A Hyung Duk Yun
%A Jaewon Wang
%A Jae©\Ung Lee
%A Jinsung Kwak
%A Jong Hwa Lee
%A Jong Uk Kim
%A Jung Hwa Kim
%A Seunguk Song
%A Se©\Yang Kim
%A Shi©\Hyun Seok
%A Tae©\il Kim
%A Yeoseon Sim
%A Yongsu Jo
%A Zonghoon Lee
%J Archive of "Advanced Science".
%D 2019
%R 10.1002/advs.201801370
%X As the elements of integrated circuits are downsized to the nanoscale, the current Cu©\based interconnects are facing limitations due to increased resistivity and decreased current©\carrying capacity because of scaling. Here, the bottom©\up synthesis of single©\crystalline WTe2 nanobelts and low©\ and high©\field electrical characterization of nanoscale interconnect test structures in various ambient conditions are reported. Unlike exfoliated flakes obtained by the top©\down approach, the bottom©\up growth mode of WTe2 nanobelts allows systemic characterization of the electrical properties of WTe2 single crystals as a function of channel dimensions. Using a 1D heat transport model and a power law, it is determined that the breakdown of WTe2 devices under vacuum and with AlOx capping layer follows an ideal pattern for Joule heating, far from edge scattering. High©\field electrical measurements and self©\heating modeling demonstrate that the WTe2 nanobelts have a breakdown current density approaching ¡Ö100 MA cm£¿2, remarkably higher than those of conventional metals and other transition©\metal chalcogenides, and sustain the highest electrical power per channel length (¡Ö16.4 W cm£¿1) among the interconnect candidates. The results suggest superior robustness of WTe2 against high©\bias sweep and its possible applicability in future nanoelectronics
%K bottom©\up process
%K electrical performance and reliability
%K future nanoelectronics
%K nanoscale interconnect
%K tungsten ditelluride (WTe2)
%U https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6364501/