%0 Journal Article
%T Polycrystalline Silicon Solar Cell p-n Junction Capacitance Behavior Modelling under an Integrated External Electrical Field Source in Solar Cell System
%A Adama Ouedraogo
%A Boukar¨¦ Ouedraogo
%A Boureima Kabor¨¦
%A Dieudonn¨¦ Joseph Bathiebo
%J Energy and Power Engineering
%P 143-153
%@ 1947-3818
%D 2020
%I Scientific Research Publishing
%R 10.4236/epe.2020.125011
%X The
state of the p-n junction is very important to explain the performances of a solar cell. Some works give the influence of the electric field on the
junction capacitance. However, these works do not relate the quality of the p-n junction under the electic field. The present manuscript is about a
theoretical modelling of the p-n junction capacitance behavior of the polycrystalline silicon solar cell
under an integration of the external electrical field source. An external
electrical source is integrated in a solar cell system. The electronic carriers
charge generated in the solar cell crossed