%0 Journal Article
%T Investigation of Inhomogeneity in Single Crystal SiC Wafers Using C-Scan Acoustic Scanning Microscopy
%A Ibrahim M. Abdel-Motaleb
%J Crystal Structure Theory and Applications
%P 1-11
%@ 2169-2505
%D 2020
%I Scientific Research Publishing
%R 10.4236/csta.2020.91001
%X In this work, C-Scan Acoustic Scanning Microscopy (ASM) is used to map the defects of three SiC samples. The acoustic images indicate that numerous defects with different shapes and area</span><span style=\"font-family:Verdana;\">&nbsp;</span><span style=\"font-family:Verdana;\">sexist in the wafers. Some of the defects have areas of more than 100,000 ¦Ìm</span><sup><span style=\"font-family:Verdana;vertical-align:super;font-size:12px;\">2</span></sup><span style=\"font-family:Verdana;\">. The number of defects ranges from 1 to 50 defects/wafer. Defect mapping is essential for defect repairing or avoidance.</span><span style=\"font-family:Verdana;\">&nbsp;</span><span style=\"font-family:Verdana;\">This work shows that ASM can locate the precise positions of the crystallographic defects, which</span><span style=\"font-family:Verdana;\">&nbsp;</span><span style=\"font-family:Verdana;\">enables</span><span style=\"font-family:Verdana;\">&nbsp;</span><span style=\"font-family:Verdana;\">defects repair and yield enhancement.
%K SiC
%K Lattice Defects
%K Acoustic Scanning Microscopy
%K ASM
%K Wafers
%U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=98508