%0 Journal Article
%T 基于SiGe BiCMOS工艺的高速光接收机模拟前端电路<br>Analog Front-End Circuit for High-Speed Optical Receiver Based on SiGe BiCMOS Technology
%A 谢生
%A 谷由之
%A 毛陆虹
%A 吴思聪
%A 高谦
%J 天津大学学报（自然科学与工程技术版）
%D 2018
%R 10.11784/tdxbz201612053
%X 基于IBM 0.18 ?m SiGe BiCMOS工艺, 设计了一款12.5 Gb/s的全差分光接收机模拟前端电路．该电路由跨阻放大器、限幅放大器、直流偏移消除电路和输出缓冲级组成．为获得更高的带宽, 本文对Cherry-Hooper结构进行了改进, 设计出一种三级级联的限幅放大器, 而直流偏移消除电路则使用了差分有源密勒电容(DAMC)来替代传统的片外大电容, 提高了电路集成度和稳定性．版图后仿结果表明, 在探测器等效电容为300 fF的情况下, 光接收机前端电路的跨阻增益为97 dB, -3 dB带宽为11.7 GHz, 等效输入噪声电流小于14.2 pA/, 芯片核心面积为720 ?m×700 ?m．<br>A fully differential analog front-end circuit for 12.5 Gb/s optical receiver was optimally designed with IBM 0.18 ?m SiGe BiCMOS technology，which included transimpedance amplifier(TIA)，limiting amplifier(LA)，DC offset cancellation(DOC)circuit and output buffer. To obtain wider bandwidth，the Cherry-Hooper structure was modified，and a cascaded limiting amplifier with three-stage Cherry-Hooper structures was proposed. Additionally，the DOC circuit adopted a differential active Miller capacitor(DAMC)to replace the traditional large off-chip capacitors，which was beneficial for improving the integration level and stability. Post-layout simulation results showed that the optical receiver front-end circuit had a -3 dB bandwidth of 11.7 GHz with a transimpedance gain of 97 dB while using a photodiode equivalent capacitance of 300 fF. The equivalent input noise current was less than 14.2 pA/ within the interesting band，and the size of core chip was 720 ?m×700 ?m
%K 光接收机
%K 跨阻放大器
%K 改进型Cherry-Hooper
%K 直流偏移消除电路
%K 锗硅双极-互补金属-氧化物-半导体&lt
%K br&gt
%K optical receiver
%K transimpedance amplifier
%K modified Cherry-Hooper
%K DC offset cancellation circuit
%K SiGe BiCMOS
%U http://journals.tju.edu.cn/zrb/oa/darticle.aspx?type=view&id=201801008