%0 Journal Article
%T 退火温度对Nb掺杂TiO2薄膜结构与性能的影响<br>Influence of Annealing Temperature on Structure and Properties of Nb-doped TiO2 Thin Films
%A 苏雷生
%A 林钰
%A 董林
%A 辛荣生
%J 郑州大学学报（工学版）
%D 2018
%X 采用磁控溅射法在玻璃衬底上制备了Nb掺杂TiO2透明导电薄膜，通过X射线衍射（XBD）、原子力显微镜（AFM）、紫外可见光谱（uv-vis）及双电测四探针对薄膜的结构和性能进行了表征。结果表明：退火温度250℃以上时，得到锐钛矿相Nb掺杂TiO2薄膜，且薄膜结构和光电性能随温度升高而改善；300℃时薄膜可见光透过率最高可达80%，电阻率降至2.5×10 -3 Ωcm ；当温度升至350℃时，薄膜晶体开始出现金红石相，光电性能也随之下降。另外，Nb掺杂有利于降低TiO2薄膜晶体的晶相转变温度，掺杂后TiO2薄膜的吸收限发生蓝移现象，并且随着退火温度的改变，薄膜吸收限产生蓝移的程度有所不同。<br>Nb-doped TiO2 transparent conductive thin films were prepared on Glass substrates by magnetron sputtering method. The structure and the photoelectric properties of the films were characterized by using X-ray diffraction (XRD), atomic force microscope (AFM),UC-Vis spectroscopy and four probe resitance tester. The results showed that the anatase phase Nb-doped TiO2 thin films were obtained when the annealing temperature above 250℃, also the structure and the photoelectricl properties were improved with the temperature increased. The best visible light transmissivity reached to 80% and resistivity droped to 2.5×10 -3 Ωcm when temperature at 300℃. As the annealing temperature were risen to 350℃, the films began to appear rutile phase, then the photoelectric properties were decreased. Moreover Nb doping was beneficial to reduce the crystal phase transformation temperature of the TiO2 thin film. The Nb-doped TiO2 thin film absorption edge also produced blue shift, and the blue shift degree of the thin films absorption edge was different with the change of annealing temperatures.
%U http://gxb.zzu.edu.cn/oa/darticle.aspx?type=view&id=201610010