%0 Journal Article
%T 低温增强型非晶铟镓锌氧薄膜晶体管特性研究<br>Characteristics Study of Low Temperature Enhanced Amorphous InGaZnO Thin Film Transistors
%A 李远洁
%A 江凯
%A 刘子龙
%J 西安交通大学学报
%D 2015
%R 10.7652/xjtuxb201512001
%X 在室温下利用射频磁控溅射沉积非晶铟镓锌氧化物(a？？IGZO)薄膜作为有源沟道层,分别制备了顶栅和底栅结构的薄膜晶体管(a？？IGZO？？TFTs)原型器件,同时研究了沟道层生长参数及后退火工艺对器件特性的影响。研究及实验结果表明:当增加底栅结构a？？IGZO？？TFTs器件IGZO沟道层氧气流量时,器件输出特性由耗尽型转变为增强型;当沟道宽长比为120∶20时,获得了4.8×105的开关电流比,亚阈值摆幅为1.2 V/dec,饱和迁移率达到11 cm2/(V？s)。沟道层氧气流量为2 cm3/min的底栅结构a？？IGZO？？TFT器件在大气中经过300℃退火30 min后,器件由耗尽型转变为增强型,获得4×103的开关电流比。<br>Transistors with top bottom？？gate thin films and a？？IGZO as the active channel layers (a？？IGZO？？TFTs) are developed by using magnetron sputtering deposition at room temperature. The characteristics of the a？？IGZO？？TFTs are investigated with regard to oxygen flow rate and post？？annealing process. The output characteristics of the bottom？？gate a？？IGZO？？TFTs convert from depletion to enhancement when the oxygen flow rate increases during deposition of the a？？IGZO active layer. The a？？IGZO？？TFTs with a channel width/length ratio of 120∶20 show good electrical properties with an on/off current ratio of 4？？8×105, a subthreshold swing of 1.21 V/dec and a saturation mobility of 11 cm2/(V？s). After the a？？IGZO？？TFTs with active layer deposited at 2 cm3/min oxygen flow rate are annealed at 300℃ in air for 30 min, the devices show good enhancement characteristics with on/off current ratio of 4×103
%K 薄膜晶体管
%K 非晶铟镓锌氧化物
%K 输运特性
%K 磁控溅射沉积&lt
%K br&gt
%K thin film transistors
%K amorphous indium gallium zinc oxide
%K transport properties
%K magnetron sputtering deposition
%U http://zkxb.xjtu.edu.cn/oa/DArticle.aspx?type=view&id=201512001