%0 Journal Article
%T 考虑可移动电荷的双栅隧穿场效应晶体管电流模型<br>Analytical Drain Current Model Considering Mobile Charges for Double？？Gate Tunneling Field Effect Transistor
%A 孟庆之
%A 李尊朝
%A 关云鹤
%A 张也非
%J 西安交通大学学报
%D 2016
%R 10.7652/xjtuxb201608007
%X 为了解决隧穿场效应晶体管(TFET)在强反型区表面势和漏电流精度下降的问题,建立了一种考虑可移动电荷影响的双栅TFET电流模型。首先求解考虑可移动电荷贡献的二维电势泊松方程,推导出表面势、电场的解析表达式;然后利用求得的电场表达式和Kane模型得到载流子的隧穿产生率;最后利用切线近似法计算隧穿产生率在隧穿区域的积分,建立了漏电流的简洁解析模型。利用器件数值仿真软件Sentaurus在不同器件参数下对所建模型进行了验证,仿真结果表明:考虑可移动电荷的影响能够提高强反型区漏电流模型的精度;在相同器件参数条件下,考虑可移动电荷的模型比忽略可移动电荷的模型精度提高了20％以上。<br>An analytical drain current model considering mobile charges for double？？gate tunneling field effect transistor is proposed to solve the problem that the precision of surface potential and drain current of the tunneling field effect transistor (TFET) declines in strong inversion regions. Firstly, the 2？？D potential Poisson’s equation is solved by taking the contribution of mobile charges into account to get the analytical expressions of the surface potential and the electric field. Then the electric field distribution and Kane model are used to get the generation rate of the carriers. Finally a compact analytical drain current model is derived by using the tangent line approximation method to calculate the integration of the tunneling generation rate in the tunneling region. The analytical model is verified by using the device numerical simulation software Sentaurus under different device parameters. Simulation results show that considering the mobile charges improves the precision of the drain current model in strong inversion regions. Comparisons with the models without considering the mobile charges show that the precision of the model considering the mobile charges is improved by more than 20％
%K 隧穿场效应晶体管
%K 可移动电荷
%K 表面势
%K 漏电流
%K 解析模型&lt
%K br&gt
%K tunneling field effect transistor
%K mobile charges
%K surface potential
%K drain current
%K compact analytical model
%U http://zkxb.xjtu.edu.cn/oa/DArticle.aspx?type=view&id=201608007