%0 Journal Article
%T 低功耗氧化铪基柔性透明阻变存储器制备及其性能研究<br>Study on fully transparent HfOx-based RRAM with lower switching power on flexible substrates
%A 廖成浩
%A 赖云锋
%A 周海芳
%J 福州大学学报(自然科学版)
%D 2018
%R 10.7631/issn.1000-2243.16419
%X 利用微电子加工工艺在柔性PET衬底上制备透明氧化铪基阻变存储器. 采用氧化铪/氧化锌双介质层将存储器转变电流降低至μA量级，从而实现柔性透明存储器的低功耗（μW量级）. 研究表明，双介质层阻变存储器不仅具有稳定、可重复的阻变存储特性，还具有一定抗弯折性能和较高的热稳定性. 进一步研究表明，由于氧化铪/氧化锌界面势垒的存在，抑制了介质中电荷的输运，从而达到器件低电流工作的效果.<br>Transparent HfOx-based RRAMs were deposited onto flexible PET substrates with micro-fabrication. HfOx/ZnO double layer was used as storage medium to reduce switching current to μA，and the switching power is reduced to μW as well. The double-layer RRAM exhibits stable and reversible resistive switching features. It also presents anti-bending properties and desirable thermal stability. Further studies show a schottky barrier at the HfOx/ZnO interface would suppress charge transport in the storage medium thus to reduce switching current
%K 阻变存储器 柔性衬底 透明氧化物 低功耗&lt
%K br&gt
%K resistive random access memory flexible substrate transparent oxide low power
%U http://xbzrb.fzu.edu.cn/ch/reader/view_abstract.aspx?file_no=201801012&flag=1