%0 Journal Article
%T 背景气压对纳秒脉冲激光烧蚀半导体Ge的影响<br>Effects of ambient pressure on ns laser ablation of Ge and its plume expansion dynamics
%A 许
%A 媛
%A 焦
%A 铮
%J 四川大学学报 (自然科学版)
%D 2015
%X 为了深入理解在纳秒激光烧蚀半导体材料过程中背景气压对烧蚀过程以及羽流膨胀动力学特性的影响，本文利用一维激光烧蚀和流体动力学耦合模型，对不同He气压下的纳秒脉冲激光烧蚀半导体Ge的过程进行了模拟计算.结果表明：在氦气环境下，背景气压的变化对辐照在靶面的激光能量影响较小，因此靶面蒸发率、靶面温度和靶面烧蚀深度对气压变化的敏感程度较低；同时，背景气压的增大抑制了羽流膨胀，使羽流膨胀速度减小.计算结果和分析对于优化纳秒激光烧蚀半导体时背景环境气压具有理论指导意义.<br>In order to understand deeply the effect of background pressure on the laser ablation process and the plume expansion dynamics during the ns laser ablation of semiconductor, one dimensional laser ablation and fluid dynamics coupling model is utilized to simulate the ns laser ablation process of semiconductor Ge in an ambient gas He at different pressures. The results show that the pressure of ambient gas He influences a little on the laser energy incident on the target surface, and thus the target evaporation rate and the target surface temperature as well as the target ablation depth are insensitive to the variation of ambient pressure. Meanwhile, increasing the ambient pressure inhibits the plume expansion and reduces the plume expansion speed. The numerical results and analyses are beneficial to optimization of the ambient pressure during the ns laser ablation of semiconductors
%K 等离子体 数值模拟 脉冲激光烧蚀 半导体Ge&lt
%K br&gt
%K Plasma Numerical simulation Pulsed laser ablation Semiconductor Ge
%U http://science.ijournals.cn/jsunature_cn/ch/reader/view_abstract.aspx?file_no=20155024&flag=1