%0 Journal Article
%T 40纳米MOSFET毫米波等效电路的弱反区关键参数提取<br>Key parameter extration of the millimeter-wave equivalent circuit of 40nm MOSFET in weak inversion
%A 王林
%A 王军
%A 王丹丹
%J 四川大学学报 (自然科学版)
%D 2017
%X 本文以双端口网络的分析方法为依托，对40纳米MOSFET的毫米波小信号等效电路的弱反区参数进行提取。该等效电路基于准静态逼近，包括完整的本征准静态MOSFET模型、串联的栅极电阻、源极电阻、漏极电阻以及衬底耦合网络。元件参数提取分为寄生参数提取和本征部分提取，是通过其等效电路的开路短路法来简化等效电路以及分析Y参数所得，提取的结果具有物理意义以及其方法能够去嵌寄生效应，如器件衬底耦合。<br>In this paper ,an efficient parameter extraction method of the small signal equivalent circuit of 40nm MOS transistors on the weak-inversion region are presented by using two-port network analysis method in millimeter wave frequency bands. The equivalent circuit is based on a quasi-static approximation, which includes the complete intrinsic quasi-static MOS model, the series gate resistance, source resistance, drain resistance and a substrate coupling network. Device parameters extraction which divided into parasitic parameter extraction and intrinsic part extraction is performed by Y-parameter analysis on simplifying the equivalent circuit for the way of OPEN and SHORT structures. The extracted results are physically meaningful and can be used to de-embed the extrinsic effects such as the substrate coupling
%K 二端口网络 40纳米MOSFET 弱反区 毫米波 参数提取&lt
%K br&gt
%K two-port network
%K 40nm MOSFET
%K weak-inversion region
%K millimeter wave
%K parameter extraction
%U http://science.ijournals.cn/jsunature_cn/ch/reader/view_abstract.aspx?file_no=W160283&flag=1