%0 Journal Article
%T Identification of Grown-In Defects in CZ Silicon after Cu Decoration
%A Kun-Lin Lin
%A Yi-Ling Jian
%A Che-Yu Lin
%A Chien-Cheng Lin
%A Yih-Rong Luo
%A Chien-Chia Tseng
%J Microscopy Research
%P 11-19
%@ 2329-3314
%D 2017
%I Scientific Research Publishing
%R 10.4236/mr.2017.52002
%X Bulk
Czochralski silicon crystals were decorated with Cu and characterized by
transmission electron microscopy (TEM) with energy-dispersive spectroscopy
(EDS), atomic force microscopy (AFM), optical microscopy (OM), scanning
electron microscopy (SEM), and photoluminescence spectroscopy (PL). The
vacancy-type core, oxidation-induced stacking faults (OISF) ring, nearly
defect-free ring, and self-interstitial-type rich outer ring were delineated in
the Si crystal wafer. At the surface of the Si crystal, vertical</span><span style=\"font-family:Verdana;\">-</span><span style=\"font-family:Verdana;\">horizontal
line (V</span><span style=\"font-family:Verdana;\">-</span><span style=\"font-family:Verdana;\">H line) defects and windmill defects (W-defects) were formed instead of
OISF. The families of growth planes and directions were expressed as {011} and
&lt;110&gt; for the V</span><span style=\"font-family:Verdana;\">-</span><span style=\"font-family:Verdana;\">H line and {010} and &lt;010&gt; for W</span><span style=\"font-family:Verdana;\">-</span><span style=\"font-family:Verdana;\">defects,
respectively. In addition to V</span><span style=\"font-family:Verdana;\">-</span><span style=\"font-family:Verdana;\">H line
defects and W-defects, pits or voids and Si oxide with dissolved Cu were found
in the Si crystal wafer.
%K CZ Silicon
%K Cu Decoration
%K Microstructures
%K Defects
%K Transmission Electron Mi-croscopy
%U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=79161