%0 Journal Article
%T 3-D Modeling of Temperature Effect on a Polycrystalline Silicon Solar Cell under Intense Light Illumination
%A Boubacar Soro
%A Martial Zoungrana
%A Issa Zerbo
%A Mahamadi Savadogo
%A Dieudonn¨¦ Joseph Bathiebo
%J Smart Grid and Renewable Energy
%P 291-304
%@ 2151-4844
%D 2017
%I Scientific Research Publishing
%R 10.4236/sgre.2017.89019
%X The efficiency of a silicon solar cell is directly linked to the quantity of carrier photogenerated in its base. It increases with the increase of the quantity of carrier in the base of the solar cell. The carrier density in the base of the solar cell increases with the increase of the flux of photons that crosses the solar cell. One of the methods used to increase the flux of photon on the illuminated side of the solar cell is the intensification of the illumination light. However, the intensification of the light come with the increase of the energy released by thermalization, the collision between carriers, their braking due to the carriers concentration gradient electric field which lead to increase the temperature in the base of the solar cell. This work presents a 3-D study, of the effect of the temperature on the electronic parameters of a polycrystalline silicon solar under intense light illumination. The electronic parameters on which we analyze the temperature effect are:</span><i><span style=\"font-family:Verdana;\">&nbsp;the mobility of solar cell carriers&nbsp;</span></i><span style=\"font-family:Verdana;\">(</span><i><span style=\"font-family:Verdana;\">electrons and holes</span></i><span style=\"font-family:Verdana;\">),&nbsp;</span><i><span style=\"font-family:Verdana;\">their diffusion coefficient, their diffusion length and their distribution in the bulk of the base</span></i><span style=\"font-family:Verdana;\">. To study the effect of the temperature on electronic parameters, we take into account, the dependence of carriers (</span><i><span style=\"font-family:Verdana;\">electrons and holes</span></i><span style=\"font-family:Verdana;\">) mobility with the temperature (</span><i><span style=\"font-family:Verdana;\">¦Ì</span><sub><span style=\"font-family:Verdana;\">n,</span></sub></i><span style=\"font-family:Verdana;\">(T)</span><i><sub><span style=\"font-family:Verdana;\">&nbsp;</span></sub><span style=\"font-family:Verdana;\">¦Ì</span><sub><span style=\"font-family:Verdana;\">p</span></sub></i><span style=\"font-family:Verdana;\">(T)). Then, the resolution of the continuity equation</span></span><span style=\"font-family:Verdana;\">,</span><span style=\"font-family:Verdana;\">which is a function of the carriers gradient electric field and the carriers mobility</span><span style=\"font-family:Verdana;\">,</span><span style=\"font-family:&quot;\"><span style=\"font-family:Verdana;\">&nbsp;leads to the expressions of</span><i><span style=\"font-family:Verdana;\">&nbsp;</span></i><span style=\"font-family:Verdana;\">the diffusion
%K Intense Light
%K Electric Field
%K Temperature
%K Diffusion Coefficient
%K Diffusion Length
%K Density of Carriers
%U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=78823