%0 Journal Article
%T Fabrication and Characterization of PLD-Grown Bismuth Telluride (Bi<sub>2</sub>Te<sub>3</sub>) and Antimony Telluride (Sb<sub>2</sub>Te<sub>3</sub>) Thermoelectric Devices
%A Ibrahim M. Abdel-Motaleb
%A Syed M. Qadri
%J Journal of Electronics Cooling and Thermal Control
%P 63-77
%@ 2162-6170
%D 2017
%I Scientific Research Publishing
%R 10.4236/jectc.2017.73006
%X We report on the fabrication and characterization of multi-leg bismuth telluride (Bi2Te3) and antimony telluride (Sb2Te3) thermoelectric devices. The two materials were deposited, on top of SiO2/Si substrates, using Pulsed Laser Deposition (PLD). The SiO2 layer was used to provide insulation between the devices and the Si wafer. Copper was used as an electrical connector and a contact for the junctions. Four devices were built, where the Bi2Te3 and Sb2Te3 were deposited at substrate temperatures of 100°C, 200°C, 300°C and 400°C. The results show that the device has a voltage sensitivity of up to 146 μV/K and temperature sensitivity of 6.8 K/mV.
%K Thermoelectric Devices
%K Bismuth Telluride
%K Bi2Te3
%K Antimony Telluride
%K Sb2Te3
%K Pulsed Laser Deposition
%K PLD
%K Seebeck Effect
%U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=77831