%0 Journal Article %T An Experimental Study on the Temperature Characteristic of a 940 nm Semiconductor Laser Diode %A Yiru Liao %A Jianjun Li %A Guoxin Mi %A Haikuo Wang %A Yuancheng Wang %A Jun Deng %A Jun Han %J Optics and Photonics Journal %P 75-82 %@ 2160-889X %D 2016 %I Scientific Research Publishing %R 10.4236/opj.2016.68B013 %X
This paper is focused on a 940 nm edge type of semiconductor laser, which is made from 940 nm InGaAs double-quantum-well epitaxial wafer, produced by Metal Organic Chemical Vapor Deposition (MOCVD). In the absence of coating, the efficiency at the room temperature is 0.89 W/A, and the averaged threshold current is 0.307 A. The present study investigates the impact of temperature on the P-I curve, V-I curve and the centre wavelength, the temperature ranging from 286.15 - 333.15 K. It shows that the threshold current increases from 0.28 A to 0.41 A with the increasing temperature. The increase rate is 0.0027 A/K. With the temperature ranging from 286.15 - 333.15 K, the characteristic temperature is calculated to be 120 K. At driven current of 2 A, the output power decreases from 1.47 W to 1.27 W at a rate of 0.00425 W/K. At a constant voltage, the output current initially increases with the temperature within a certain range, beyond which the impact of the temperature is minimum. The ideal factor obtained from V-I curve by curve fitting is 1.076. The series resistance is 0.609 ¦¸. The centre wavelength shifts to a longer wavelength with the increasing temperature at a rate of 0.275288 nm/K.
%K 940 nm Semiconductor Laser %K Threshold Current %K Characteristic Temperature %U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=70305