%0 Journal Article
%T C掺杂ZnO稀磁半导体的磁特性研究<br>Study on the magnetic properties of C-doped ZnO
%A 翁臻臻
%J 福州大学学报(自然科学版)
%D 2015
%R 10.7631/issn.1000-2243.2015.06.0778
%X 利用基于密度泛函理论（DFT）的第一性原理计算方法，研究C掺杂ZnO稀磁半导体的磁性质. 发现ZnO ∶C体系的磁性来源于C-p和Zn-d轨道之间的杂化，铁磁性产生的机制是以巡游电子为媒介的铁磁交换作用. 富O环境下制备ZnO ∶C样品能够更好地在室温下得到稳定的铁磁有序.<br>The magnetism of C-doped ZnO has been investigated by the first-principles calculations based on density functional theory (DFT). It is found the magnetism of C-doped ZnO is derived from the hybridization between the C-p and Zn-d orbit，and the electron mediated mechanism is proposed for the ferromagnetism in the C-doped ZnO. The sample should be fabricated under O-rich condition to have a ferromagnetic ordering
%K 氧化锌 稀磁半导体 第一性原理 磁特性&lt
%K br&gt
%K ZnO diluted magnetic semiconductor first-principles magnetic character
%U http://xbzrb.fzu.edu.cn/ch/reader/view_abstract.aspx?file_no=20150610&flag=1